FDD4243-G Datasheet | onsemi

Description This P- Channel MOSFET has been produced using onsemi’s proprietary POWERTRENCH technology to deliver low RDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. Features - Max RDS(on) = 44 m W at VGS = - 10 V, ID = - 6.7 A - Max RDS(on) = 64 m W at VGS = - 4.5 V, ID = - 5.5 A - High Performance Trench Technology for Extremely Low r DS(on) - Pb- Free, Halide Free and Ro HS pliant ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted. Symbol Parameter Ratings Unit VDS Drain to Source Voltage - 40 VGS Gate to Source Voltage ±20 ID Drain Current - Continuous (Package Limited) TC = 25°C - 14 - Continuous (Silicon Limited) TC = 25°C - 24 (Note 1) - Continuous (Note 1a) TA = 25°C - 6.7 - Pulsed - 60 EAS Single Pulse Avalanche Energy (Note 3) PD Power dissipation - TC = 25°C - (Note 1a) W 42 3 TJ, Operating and Storage Junction TSTG Temperature Range - 55 to °C...