FDD4141 Datasheet | onsemi

Description This P- Channel MOSFET has been produced using onsemi’s proprietary POWERTRENCH technology to deliver low RDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Features - Max RDS(on) = 12.3 m W at VGS = - 10 V, ID = - 12.7 A - Max RDS(on) = 18.0 m W at VGS = - 4.5 V, ID = - 10.4 A - High Performance Trench Technology for Extremely Low RDS(on) - This Device is Pb- Free and is Ro HS pliant Applications - Inverter - Power Supplies MOSFET MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Parameter Ratings Unit Drain to Source Voltage - 40 VGS Gate to Source Voltage 20 Drain Current - Continuous (Package limited) TC = 25C - 50 - Continuous (Silicon limited) TC = 25C - 58 - Continuous TA = 25C (Note 1a) - 10.8 - Pulsed - 100 EAS Single Pulse Avalanche Energy (Note 3) 337 m J Power...