* Max RDS(on) = 12.3 mW at VGS = −10 V, ID = −12.7 A
* Max RDS(on) = 18.0 mW at VGS = −4.5 V, ID = −10.4 A
* High Performance Trench Technology for Extremely .

and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Fea.

This P−Channel MOSFET has been produced using onsemi’s proprietary POWERTRENCH technology to deliver low RDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability r.

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