FDD3690
FDD3690 is N-Channel MOSFET manufactured by onsemi.
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Features
- 22 A, 100 V. RDS(ON) = 64 mΩ @ VGS = 10 V RDS(ON) = 71 mΩ @ VGS = 6 V
- Low gate charge (28n C typical)
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
- Fast Switching
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
S DTO-P-2A5K2 (TO-252)
Absolute Maximum Ratings TA=25o C unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C
Pulsed
(Note 3) (Note 1a)
PD TJ, TSTG
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
Package Marking and Ordering Information
Device Marking
Device
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