Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Features
- 22 A, 100 V. RDS(ON) = 64 mΩ @ VGS = 10 V RDS(ON) = 71 mΩ @ VGS = 6 V.
- Low gate charge (28nC typical)
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
- Fast Switching.
- High performance trench technology for extremely low RDS(ON).
FDD3690 Datasheet
