FDD3680 Description
This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
FDD3680 Key Features
- 25 A, 100 V. RDS(ON) = 46 mW @ VGS = 10 V
- Low Gate Charge (38 nC Typical)
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability