| Description | This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power s... |
| Features |
• 25 A, 100 V. RDS(ON) = 46 mW @ VGS = 10 V RDS(ON) = 51 mW @ VGS = 6 V • Low Gate Charge (38 nC Typical) • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(ON) • High Power and Current Handling Capability ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGSS ID Dra... |
| Datasheet |
 FDD3680 Datasheet - 340.54KB |
