Datasheet4U Logo Datasheet4U.com

FDD3680 - N-Channel MOSFET

Datasheet Summary

Description

This N

improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

  • 25 A, 100 V. RDS(ON) = 46 mW @ VGS = 10 V RDS(ON) = 51 mW @ VGS = 6 V.
  • Low Gate Charge (38 nC Typical).
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • High Power and Current Handling Capability.

📥 Download Datasheet

Datasheet preview – FDD3680

Datasheet Details

Part number FDD3680
Manufacturer ON Semiconductor
File Size 340.54 KB
Description N-Channel MOSFET
Datasheet download datasheet FDD3680 Datasheet
Additional preview pages of the FDD3680 datasheet.
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
MOSFET – N-Channel, POWERTRENCH) DATA SHEET www.onsemi.com VDSS 100 V RDS(ON) MAX 46 mW @ 10 V ID MAX 25 A 100 V FDD3680 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 25 A, 100 V.
Published: |