Description
This N-Channel MOSFET has been designed specifically to improve t he overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Features
- 3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V.
- Low gate charge.
- Fas t switching speed.
- High performance trench technology for extremely
low RDS(ON).
- High power and current handling capability
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current.
- Continuous Drain Current.
- Pulsed
(Note 1)
PD dv/dt
Maximum Power Dissipation @ TC = 25°C
@.
FDD2670-ONSemiconductor.pdf
