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FDD2670 - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel MOSFET has been designed specifically to improve t he overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFET's feature faster switching and lower gate charge than other MOSFET's with comparable RDS(ON) specifications.

Features

  • 3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V.
  • Low gate charge.
  • Fas t switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous Drain Current.
  • Pulsed (Note 1) PD dv/dt Maximum Power Dissipation @ TC = 25°C @.

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Datasheet Details

Part number FDD2670
Manufacturer ON Semiconductor
File Size 378.47 KB
Description N-Channel MOSFET
Datasheet download datasheet FDD2670 Datasheet
Additional preview pages of the FDD2670 datasheet.

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Full PDF Text Transcription

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FDD2670 FDD2670 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve t he overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFET's feature faster switching and lower gate charge than other MOSFET's with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. D G S TO-252 Features • 3.6 A, 200 V.
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