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FDD2670 Datasheet N-Channel MOSFET

Manufacturer: onsemi

General Description

This N-Channel MOSFET has been designed specifically to improve t he overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFET's

Overview

FDD2670 FDD2670 200V N-Channel PowerTrench MOSFET General.

Key Features

  • 3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V.
  • Low gate charge.
  • Fas t switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous Drain Current.
  • Pulsed (Note 1) PD dv/dt Maximum Power Dissipation @ TC = 25°C @.