FDD2670 mosfet equivalent, n-channel mosfet.
* 3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V
* Low gate charge
* Fas t switching speed
* High performance trench technology for extremely
low RDS(ON)
This N-Channel MOSFET has been designed specifically to improve t he overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFET's feature faster switching and lower gate charge than other M.
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