FDD2670
Description
This N-Channel MOSFET has been designed specifically to improve t he overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFET's feature faster switching and lower gate charge than other MOSFET's with parable RDS(ON) specifications.
Key Features
- 3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V
- Low gate charge
- Fas t switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability D G S
