FDD18N20LZ - 200V 16A N-Channel MOSFET

onsemi

General Description

on planar stripe and DMOS technology.

state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

RDS(on) = 125 mW (Typ. ) @ VGS = 10 V, ID = 8 A.
Low Gate Charge (Typ. 30 nC).
Low CRSS (Typ. 25 pF).
100% Avalanche Tested.
Improved dv/dt Capability.
ESD Improved Capability.
These Device is Pb.
Free and is RoHS Compliant.

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FDD18N20LZ 200v 16a n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDD18N20LZ
Manufacturer	onsemi
File Size	251.85 KB
Description	200V 16A N-Channel MOSFET
Datasheet	FDD18N20LZ Datasheet

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Full PDF Text Transcription (Reference)

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MOSFET - N-Channel, UniFETt 200 V, 16 A, 125 mW FDD18N20LZ Description UniFET MOSFET is onsemi’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Features  RDS(on) = 125 mW (Typ.) @ VGS = 10 V, ID = 8 A  Low Gate Charge (Typ. 30 nC)  Low CRSS (Typ.