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FDD120AN15A0 - N-Channel MOSFET

Features

  • RDS(on) = 101 mW (Typ. ) @ VGS = 10 V, ID = 4 A.
  • QG(tot) = 11.2 nC (Typ. ) @ VGS = 10 V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 150 V, 14 A, 120 mW FDD120AN15A0 Features • RDS(on) = 101 mW (Typ.) @ VGS = 10 V, ID = 4 A • QG(tot) = 11.2 nC (Typ.) @ VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • This Device is Pb−Free, Halide Free and is RoHS Compliant Applications • Consumer Appliances • LED TV • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25°C, VGS = 10 V) Continuous (TC = 100°C, VGS = 10 V) Continuous (Tamb = 25°C, VGS = 10 V) with RqJA = 52°C/W Pulsed 150 V ±20 V A 14 9.7 2.
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