FDC642P Description
Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A Fast switching speed Low gate charge (11nC typical) High performance trench technology for extremely low rDS(on) SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1 mm thick) Termination is Lead-free and RoHS pliant This P-Channel 2.5V specified MOSFET is produced using...
FDC642P Key Features
- Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A
- Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A
- Fast switching speed
- Low gate charge (11nC typical)
- High performance trench technology for extremely low rDS(on)
- SuperSOTTM-6 package: small footprint (72% smaller than
- Termination is Lead-free and RoHS pliant