FDC642P datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

General Description
* Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A
* Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A
* Fast switching speed
* Low .

Application

where the larger packages are impractical. Applications
* Load switch
* Battery protection
* Power managemen.

Description

* Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A
* Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A
* Fast switching speed
* Low gate charge (11nC typical)
* High performance trench technology for extremely low rDS(on)
* S.

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