FDC642P Overview
Description
Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A - Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A - Fast switching speed - Low gate charge (11nC typical) - High performance trench technology for extremely low rDS(on) - SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1 mm thick) - Termination is Lead-free and RoHS Compliant This P-Channel 2.5V specified MOSFET is produced using ON Semicondcutor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.
