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FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET
FDC642P
Single P-Channel 2.5V Specified PowerTrench® MOSFET
-20 V, -4.0 A, 65 mΩ
Features
General Description
Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A Fast switching speed
Low gate charge (11nC typical)
High performance trench technology for extremely low rDS(on) SuperSOTTM-6 package: small footprint (72% smaller than
standard SO-8); low profile (1 mm thick) Termination is Lead-free and RoHS Compliant
This P-Channel 2.5V specified MOSFET is produced using ON Semicondcutor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
FDC642P Datasheet
