Datasheet Summary
FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET
Single P-Channel 2.5V Specified PowerTrench® MOSFET
-20 V, -4.0 A, 65 mΩ
Features
General Description
- Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A
- Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A
- Fast switching speed
- Low gate charge (11nC typical)
- High performance trench technology for extremely low rDS(on)
- SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1 mm thick)
- Termination is Lead-free and RoHS pliant
This P-Channel 2.5V specified MOSFET is produced using ON Semicondcutor’s advanced PowerTrench® process that has been especially tailored to minimize...
