FDC6420C Description
These N & P−Channel MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are impractical.
FDC6420C Key Features
- Q1 3.0 A, 20 V
- RDS(on) = 70 mW @ VGS = 4.5 V
- RDS(on) = 95 mW @ VGS = 2.5 V
- Q2 -2.2 A, -20 V
- RDS(on) = 125 mW @ VGS = -4.5 V
- RDS(on) = 190 mW @ VGS = -2.5 V
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(on)
- SUPERSOTt-6 Package: Small Footprint (72% Smaller than
- This is a Pb-Free Device