FDC634P mosfet equivalent, p-channel mosfet.
* −3.5 A, −20 V
RDS(ON) = 80 mW @ VGS = −4.5 V RDS(ON) = 110 mW @ VGS = −2.5 V
* Low Gate Charge (7.2 nC Typical)
* High Performance Trench Technology for Ext.
Features
* −3.5 A, −20 V
RDS(ON) = 80 mW @ VGS = −4.5 V RDS(ON) = 110 mW @ VGS = −2.5 V
* Low Gate Charge (7.2 .
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