FDC634P datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* −3.5 A, −20 V RDS(ON) = 80 mW @ VGS = −4.5 V RDS(ON) = 110 mW @ VGS = −2.5 V
* Low Gate Charge (7.2 nC Typical)
* High Performance Trench Technology for Ext.

Application

Features
* −3.5 A, −20 V RDS(ON) = 80 mW @ VGS = −4.5 V RDS(ON) = 110 mW @ VGS = −2.5 V
* Low Gate Charge (7.2 .

Description

This P−Channel 2.5 V specified MOSFET uses onsemi’s low voltage POWERTRENCH process. It has been optimized for battery power management applications. Features
* −3.5 A, −20 V RDS(ON) = 80 mW @ VGS = −4.5 V RDS(ON) = 110 mW @ VGS = −2.5 V
* Lo.

Image gallery