FDB0690N1507L
Overview
This N-Channel MOSFET is produced using ON Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications. High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant.
- Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 17 A
- Fast Switching Speed
- Low Gate Charge
