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FCU900N60Z - N-Channel MOSFET

General Description

SuperFET® II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Key Features

  • 675 V @ TJ = 150°C.
  • Typ. RDS(on) = 820 mW.
  • Ultra Low Gate Charge (Typ. Qg = 13 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 48.6 pF).
  • 100% Avalanche Tested.
  • ESD Improved Capacity.
  • RoHS Compliant.

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FCU900N60Z MOSFET, N-Channel, SuperFET) II 600 V, 4.5 A, 900 mW Description SuperFET® II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Features • 675 V @ TJ = 150°C • Typ. RDS(on) = 820 mW • Ultra Low Gate Charge (Typ. Qg = 13 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 48.