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FCU360N65S3R0 - N-Channel Power MOSFET

Description

SUPERFET III MOSFET is ON Semiconductor’s brand

voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 310 mW.
  • Ultra Low Gate Charge (Typ. Qg = 18 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 173 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

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FCU360N65S3R0 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for various power systems for miniaturization and higher efficiency. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 310 mW • Ultra Low Gate Charge (Typ. Qg = 18 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
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