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FCPF600N60ZL1-F154 - N-Channel MOSFET

Description

SUPERFET II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 510 mW.
  • Ultra Low Gate Charge (Typ. Qg = 20 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 74 pF).
  • 100% Avalanche Tested.
  • ESD Improved Capacity.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, SUPERFET) II 600 V, 7.4 A, 600 mW FCPF600N60ZL1-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II FAST MOSFET series helps minimize various power systems and improve system efficiency. Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 510 mW • Ultra Low Gate Charge (Typ. Qg = 20 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
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