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FCPF380N60E-F154 - N-Channel MOSFET

General Description

SUPERFET II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Key Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 320 mW.
  • Ultra Low Gate Charge (Typ. Qg = 34 nC).
  • Low Effective Output Capacitance (Typ. Coss. eff = 97 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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MOSFET – N-Channel, SUPERFET) II 600 V, 10.2 A, 380 mW FCPF380N60E-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 320 mW • Ultra Low Gate Charge (Typ. Qg = 34 nC) • Low Effective Output Capacitance (Typ. Coss.