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FCPF380N60 - N-Channel MOSFET

Download the FCPF380N60 datasheet PDF. This datasheet also covers the FCPF380N60-F154 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

SUPERFET II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 330 mW.
  • Ultra Low Gate Charge (Typ. Qg = 30 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 95 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FCPF380N60-F154-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FCPF380N60 N-Channel MOSFET Fairchild Semiconductor
FCPF380N60 N-Channel MOSFET INCHANGE
FCPF380N60E N-Channel MOSFET Fairchild Semiconductor
FCPF380N65FL1 N-Channel MOSFET INCHANGE
FCPF380N65FL1 N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FCPF380N60-F152 N-Channel MOSFET
FCPF380N60-F154 N-Channel MOSFET
FCPF380N60E N-Channel MOSFET
FCPF380N60E-F154 N-Channel MOSFET
FCPF380N65FL1-F154 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, SUPERFET) II 600 V, 10.2 A, 380 mW FCPF380N60-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II FAST MOSFET series helps minimize various power systems and improve system efficiency. Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 330 mW • Ultra Low Gate Charge (Typ. Qg = 30 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
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