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FCPF380N60-F152 - N-Channel MOSFET

General Description

SuperFET®II MOSFET is ON Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650 V @TJ = 150°C.
  • Max. RDS(on) = 380 mΩ.
  • Ultra low gate charge (typ. Qg = 30 nC).
  • Low effective output capacitance (typ. Coss. eff = 95 pF).
  • 100% avalanche tested Aplications.
  • LCD / LED / PDP TV Lighting.

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FCPF380N60-F152 — N-Channel MOSFET FCPF380N60-F152 N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ Features • 650 V @TJ = 150°C • Max. RDS(on) = 380 mΩ • Ultra low gate charge (typ. Qg = 30 nC) • Low effective output capacitance (typ. Coss.eff = 95 pF) • 100% avalanche tested Aplications • LCD / LED / PDP TV Lighting Description SuperFET®II MOSFET is ON Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.