Datasheet4U Logo Datasheet4U.com

FCPF260N60E-F154 - N-Channel MOSFET

Description

SUPERFET II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 220 mW.
  • Ultra Low Gate Charge (Typ. Qg = 48 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 129 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FCPF260N60E MOSFET Fairchild Semiconductor
FCPF260N65FL1 N-Channel MOSFET Fairchild Semiconductor
FCPF20N60 N-Channel MOSFET Fairchild Semiconductor
FCPF220N80 MOSFET Fairchild Semiconductor
FCPF2250N80Z N-Channel MOSFET INCHANGE

Other Datasheets by onsemi

Part Number Description
FCPF260N60E N-Channel MOSFET
FCPF260N65F N-Channel MOSFET
FCPF260N65FL1-F154 N-Channel MOSFET
FCPF20N60 N-Channel MOSFET
FCPF250N65S3 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, SUPERFET) II 600 V, 15 A, 260 mW FCPF260N60E-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 220 mW • Ultra Low Gate Charge (Typ. Qg = 48 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
Published: |