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FCP600N65S3R0 - N-Channel MOSFET

Description

SUPERFET III MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 493 mW.
  • Ultra Low Gate Charge (Typ. Qg = 11 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 127 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription

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MOSFET – Power, N-Channel, SUPERFET[ III, Easy Drive 650 V, 600 mW, 6 A FCP600N65S3R0 Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 493 mW • Ultra Low Gate Charge (Typ. Qg = 11 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
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