FCP600N65S3R0 Datasheet, ON Semiconductor

* 700 V @ TJ = 150°C
* Typ. RDS(on) = 493 mW
* Ultra Low Gate Charge (Typ. Qg = 11 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF)
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* Computing / Display Power Supplies
* Telecom / Server Power Supplies
* Industrial Power Supplies
* Lig.

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored t.