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FCP600N60Z - N-Channel MOSFET

Datasheet Summary

Description

SUPERFET II MOSFET is onsemi’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 650 V @ TJ = 150C.
  • Typ. RDS(on) = 510 mW.
  • Ultra Low Gate Charge (Typ. Qg = 20 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 74 pF).
  • 100% Avalanche Tested.
  • ESD Improved Capacity.
  • RoHS Compliant.

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Datasheet Details

Part number FCP600N60Z
Manufacturer ON Semiconductor
File Size 430.85 KB
Description N-Channel MOSFET
Datasheet download datasheet FCP600N60Z Datasheet
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MOSFET – N-Channel, SUPERFET) II 600 V, 7.4 A, 600 mW FCP600N60Z, FCPF600N60Z Description SUPERFET II MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Features  650 V @ TJ = 150C  Typ. RDS(on) = 510 mW  Ultra Low Gate Charge (Typ. Qg = 20 nC)  Low Effective Output Capacitance (Typ. Coss(eff.
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