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FCP600N60Z Datasheet N-Channel MOSFET

Manufacturer: onsemi

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General Description

SUPERFET II MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance.

This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.

Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Overview

MOSFET – N-Channel, SUPERFET) II 600 V, 7.4 A, 600 mW FCP600N60Z,.

Key Features

  • 650 V @ TJ = 150C.
  • Typ. RDS(on) = 510 mW.
  • Ultra Low Gate Charge (Typ. Qg = 20 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 74 pF).
  • 100% Avalanche Tested.
  • ESD Improved Capacity.
  • RoHS Compliant.

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