• 650 V @ TJ = 150°C • Typ. RDS(on) = 150 mW • Ultra Low Gate Charge (Typ. Qg = 75 nC ) • Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) • 100% Avalanche Tested • These Devices are Pb−Fr.
File Size : 420.52KB ·
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