FCP20N60
Overview
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 150 mW
- Ultra Low Gate Charge (Typ. Qg = 75 nC )
- Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )
- 100% Avalanche Tested
- These Devices are Pb-Free and are RoHS Compliant
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| FCP20N60 | Fairchild Semiconductor | N-Channel MOSFET |