FCP20N60 datasheet, mosfet equivalent, ON Semiconductor

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datasheet Download (Size : 420.52KB)

Features and benefits

* 650 V @ TJ = 150°C
* Typ. RDS(on) = 150 mW
* Ultra Low Gate Charge (Typ. Qg = 75 nC )
* Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )

Application

such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Features
* 650 V @ TJ .

Description

SuperFET MOSFET is onsemi’s first generation of high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize con.

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