FCMT099N65S3 mosfet equivalent, n-channel mosfet.
* 700 V @ TJ = 150°C
* Typ. RDS(on) = 87 mW
* Ultra Low Gate Charge (Typ. Qg = 56 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 500 pF)
* .
such as server / telecom power, adaptor and solar inverter applications.
The Power88 package is an ultra−slim surface−mo.
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored t.
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