FCH76N60NF mosfet equivalent, n-channel mosfet.
* RDS(on) = 28.7 mW (Typ.) @ VGS = 10 V, ID = 38 A
* Ultra Low Gate Charge (Typ. Qg = 230 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 896 pF)
such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SUPREMOS FRFET® MOSFET’s o.
The SUPREMOS® MOSFET is ON Semiconductor’s next
generation of high voltage super−junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process co.
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