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FCB260N65S3 - N-Channel MOSFET

Description

SUPERFET III MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 222 mW.
  • Ultra Low Gate Charge (Typ. Qg = 24 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 248 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FCB260N65S3 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 260 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advance technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for various power system miniaturization and higher efficiency. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 222 mW • Ultra Low Gate Charge (Typ. Qg = 24 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
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