FCB260N65S3 mosfet equivalent, n-channel mosfet.
* 700 V @ TJ = 150°C
* Typ. RDS(on) = 222 mW
* Ultra Low Gate Charge (Typ. Qg = 24 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)
*.
* Telecom / Server Power Supplies
* Industrial Power Supplies
* UPS / Solar
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VDSS 650 V
RDS.
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advance technology is tailored to.
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