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EGP10K - High-Efficiency Rectifier

Download the EGP10K datasheet PDF. This datasheet also covers the EGP10A variant, as both devices belong to the same high-efficiency rectifier family and are provided as variant models within a single manufacturer datasheet.

Description

AXIAL LEAD / DO

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

Features

  • Superfast Recovery Time for High Efficiency.
  • Low Forward Voltage, High Current Capability.
  • Low Leakage Current.
  • High Surge Current Capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (EGP10A-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number EGP10K
Manufacturer onsemi
File Size 148.90 KB
Description High-Efficiency Rectifier
Datasheet download datasheet EGP10K Datasheet

📁 Similar Datasheet

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EGP10K Super Fast Recovery Rectifier TAITRON

Other Datasheets by onsemi

Part Number Description
EGP10A High-Efficiency Rectifier
EGP10B High-Efficiency Rectifier
EGP10C High-Efficiency Rectifier
EGP10D High-Efficiency Rectifier
EGP10F High-Efficiency Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com Rectifier, High Efficiency, Glass Passivated, 1.0 A EGP10B - EGP10K Features  Superfast Recovery Time for High Efficiency  Low Forward Voltage, High Current Capability  Low Leakage Current  High Surge Current Capability ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Value Unit IO If(surge) Average Rectified Current 0.375” lead length @ TL = 75_C Peak Forward Surge Current 8.3 ms single half−sine−wave Superimposed on rated load (JEDEC method) 1.0 A 30 A PD Total Device Dissipation Derate above 25_C 2.5 W 17 mWC IC Thermal Resistance, Junction to Ambient 50 TJ, TSTG Junction and Storage Temperature Range −65~150 C/W C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
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