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ECH8668 - Power MOSFET

Features

  • The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting.
  • 1.8V drive.
  • Halogen free compliance.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Sy.

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Datasheet Details

Part number ECH8668
Manufacturer onsemi
File Size 262.24 KB
Description Power MOSFET
Datasheet download datasheet ECH8668 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1510A ECH8668 Power MOSFET 20V, 7.5A, 17mΩ, –20V, –5A, 38mΩ, Complementary Dual ECH8 http://onsemi.com Features • The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting • 1.8V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.
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