CPH3205 - Bipolar Transistor

Features

• Adoption of FBIT, MBIT processes.
• Large current capacity.
• Low collector-to-emitter saturation voltage.
• High-speed switching.
• Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm).
• High allowable power dissipation Specifications ( ): CPH3105 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Cur.