Part BUL642D2
Description High Gain Bipolar NPN Transistor
Category Transistor
Manufacturer onsemi
Size 124.11 KB
onsemi
BUL642D2

Overview

  • Low Base Drive Requirement
  • High Peak DC Current Gain (55 Typical) @ IC = 300 mA/5 V
  • Extremely Low Storage Time Min/Max Guarantees Due to the * * * *
  • H2BIP Structure which Minimizes the Spread Integrated Collector-Emitter Free Wheeling Diode Fully Characterized Dynamic VCEsat “Six Sigma” Process Providing Tight and Reproducible Parameter Spreads Avalanche Energy 20 mJ Typical Capability Pb-Free Package is Available*