BUL642D2 Description
BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor (H2BIP). Tight dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for Light Ballast Application. A new development process brings avalanche energy...
BUL642D2 Key Features
- Low Base Drive Requirement
- High Peak DC Current Gain (55 Typical) @ IC = 300 mA/5 V
- Extremely Low Storage Time Min/Max Guarantees Due to the
- H2BIP Structure which Minimizes the Spread Integrated Collector-Emitter Free Wheeling Diode Fully Characterized Dynamic
- For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering
- Rev. 1
- Continuous
- Peak (Note 1)
- Continuous
- Total Device Dissipation @ TC = 25°C -Derate above 25°C Operating and Storage Temperature