BUL642D2 Datasheet | onsemi

Features http://onsemi. 3 AMPERES 825 VOLTS 75 WATTS POWER TRANSISTOR - Low Base Drive Requirement - High Peak DC Current Gain (55 Typical) @ IC = 300 m A/5 V - Extremely Low Storage Time Min/Max Guarantees Due to the - - - - - H2BIP Structure which Minimizes the Spread Integrated Collector- Emitter Free Wheeling Diode Fully Characterized Dynamic VCEsat “Six Sigma” Process Providing Tight and Reproducible Parameter Spreads Avalanche Energy 20 m J Typical Capability Pb- Free Package is Available- MARKING DIAGRAM TO- 220AB CASE 221A STYLE 1 1 2 BUL642D2G AYWW BUL642D2 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb- Free Package ORDERING INFORMATION Device BUL642D2 BUL642D2G Package TO- 220 TO- 220 (Pb- Free) Shipping 50 Units/Rail 50 Units/Rail - For additional information on our Pb- Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 1 © Semiconductor ponents Industries, LLC, 2005 August, 2005 - Rev. 1 Publication Order Number: BUL642D2/D .. MAXIMUM RATINGS Rating Collector- Emitter Sustaining Voltage Collector- Base Breakdown Voltage Emitter- Base Voltage Collector Current Base Current - Continuous - Peak (Note 1) - Continuous - Peak (Note 1) Symbol VCEO VCES VEBO IC ICM IB IBM PD TJ, Tstg Value 440 825 11 3.0 8.0 2.0 4.0 75 0.6 - 65 to +150 Unit Vdc Vdc Vdc Adc Adc W W/°C °C - Total Device Dissipation @ TC = 25°C - Derate above 25°C Operating and Storage Temperature Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. TYPICAL GAIN Rating Typical Gain @ IC = 1 A, VCE = 2 V Typical A, VCE = 1 V Symbol h FE h FE Value 45 50 Unit - - THERMAL CHARACTERISTICS Characteristic...