900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  ON Semiconductor Electronic Components Datasheet  

BUL642D2 Datasheet

High Gain Bipolar NPN Transistor

No Preview Available !

BUL642D2
High Speed, High Gain
Bipolar NPN Transistor with
Integrated
Collector−Emitter and
Built−in Efficient
Antisaturation Network
The BUL642D2 is a state−of−the−art High Speed High Gain
Bipolar Transistor (H2BIP). Tight dynamic characteristics and lot to
lot minimum spread (150 ns on storage time) make it ideally suitable
for Light Ballast Application. A new development process brings
avalanche energy capability, making the device extremely rugged.
Features
Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ IC = 300 mA/5 V
Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
Integrated Collector−Emitter Free Wheeling Diode
Fully Characterized Dynamic VCEsat
“Six Sigma” Process Providing Tight and Reproducible Parameter
Spreads
Avalanche Energy 20 mJ Typical Capability
Pb−Free Package is Available*
www.DataSheet4U.com
http://onsemi.com
3 AMPERES
825 VOLTS
75 WATTS
POWER TRANSISTOR
1
2
3
MARKING
DIAGRAM
4
TO−220AB
CASE 221A
STYLE 1
BUL642D2G
AYWW
BUL642D2
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 1
1
ORDERING INFORMATION
Device
BUL642D2
BUL642D2G
Package
TO−220
TO−220
(Pb−Free)
Shipping
50 Units/Rail
50 Units/Rail
Publication Order Number:
BUL642D2/D


  ON Semiconductor Electronic Components Datasheet  

BUL642D2 Datasheet

High Gain Bipolar NPN Transistor

No Preview Available !

BUL642D2
www.DataSheet4U.com
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
*Total Device Dissipation @ TC = 25°C
*Derate above 25°C
VCEO
VCES
VEBO
IC
ICM
IB
IBM
PD
440 Vdc
825 Vdc
11 Vdc
3.0 Adc
8.0
2.0 Adc
4.0
75 W
0.6 W/°C
Operating and Storage Temperature
TJ, Tstg − 65 to +150 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
TYPICAL GAIN
Rating
Symbol
Value
Unit
Typical Gain @ IC = 1 A, VCE = 2 V
Typical A, VCE = 1 V
THERMAL CHARACTERISTICS
hFE 45
hFE 50
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes: 1/8 in. from Case for 5 seconds
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%
RqJC
RqJA
TL
1.6 °C/W
62.5 °C/W
260 °C
http://onsemi.com
2


Part Number BUL642D2
Description High Gain Bipolar NPN Transistor
Maker ON Semiconductor
Total Page 8 Pages
PDF Download

BUL642D2 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 BUL642D2 High Gain Bipolar NPN Transistor
ON Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy