BUL642D2
Overview
- Low Base Drive Requirement
- High Peak DC Current Gain (55 Typical) @ IC = 300 mA/5 V
- Extremely Low Storage Time Min/Max Guarantees Due to the * * * *
- H2BIP Structure which Minimizes the Spread Integrated Collector-Emitter Free Wheeling Diode Fully Characterized Dynamic VCEsat “Six Sigma” Process Providing Tight and Reproducible Parameter Spreads Avalanche Energy 20 mJ Typical Capability Pb-Free Package is Available*