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  ON Semiconductor Electronic Components Datasheet  

BTB16-800BW3G Datasheet

Triacs Silicon Bidirectional Thyristors

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BTB16-600BW3G,
BTB16-700BW3G,
BTB16-800BW3G
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Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
Blocking Voltage to 800 V
On-State Current Rating of 16 A RMS at 80°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt 1500 V/ms minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
High Commutating dI/dt 7.5 A/ms minimum at 125°C
These are PbFree Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Peak Repetitive OffState Voltage (Note 1)
(TJ = 40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTB16600BW3G
BTB16700BW3G
BTB16800BW3G
VDRM,
VRRM
600
700
800
Unit
V
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 80°C)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
IT(RMS)
ITSM
I2t
16 A
170 A
120 A2sec
NonRepetitive Surge Peak OffState
Voltage (TJ = 25°C, t = 8.3 ms)
VDSM/
VRSM
VDSM/VRSM
+100
V
Peak Gate Current (TJ = 125°C, t 20 ms) IGM 4.0 A
Average Gate Power (TJ = 125°C)
PG(AV)
1.0
W
Operating Junction Temperature Range
TJ 40 to +125 °C
Storage Temperature Range
Tstg 40 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
TRIACS
16 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
4 MARKING
DIAGRAM
123
x
A
Y
WW
G
TO220AB
CASE 221A
STYLE 4
BTB16xBWG
AYWW
= 6, 7 or 8
= Assembly Location
= Year
= Work Week
= PbFree Package
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 Main Terminal 2
ORDERING INFORMATION
Device
BTB16600BW3G
Package
TO220AB
(PbFree)
Shipping
50 Units / Rail
BTB16700BW3G TO220AB 50 Units / Rail
(PbFree)
BTB16800BW3G TO220AB 50 Units / Rail
(PbFree)
*For additional information on our PbFree strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
May, 2009 Rev. 2
1
Publication Order Number:
BTB16600BW3/D


  ON Semiconductor Electronic Components Datasheet  

BTB16-800BW3G Datasheet

Triacs Silicon Bidirectional Thyristors

No Preview Available !

BTB16600BW3G, BTB16700BW3G, BTB16800BW3G
www.DataSheet4U.com
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, JunctiontoCase (AC)
JunctiontoAmbient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 seconds
RqJC
RqJA
TL
1.9 °C/W
60
260 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = 125°C
IDRM/
IRRM
Peak On-State Voltage (Note 2)
(ITM = ± 22.5 A Peak)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
VTM − −
IGT
2.5
2.5
2.5
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±150 mA)
Latching Current (VD = 12 V, IG = 50 mA)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
IH − −
IL
−−
−−
−−
Gate Trigger Voltage (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
VGT
0.5
0.5
0.5
Gate NonTrigger Voltage (TJ = 125°C)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
VGD
0.2
0.2
0.2
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 125°C, No Snubber)
Critical Rate of Rise of OnState Current
(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr 100 ns)
Critical Rate of Rise of Off-State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
(dI/dt)c
dI/dt
dV/dt
7.5
1500
Max Unit
0.005
2.0
mA
1.55 V
mA
50
50
50
60 mA
mA
70
90
70
V
1.7
1.1
1.1
V
A/ms
50 A/ms
V/ms
http://onsemi.com
2


Part Number BTB16-800BW3G
Description Triacs Silicon Bidirectional Thyristors
Maker ON Semiconductor
Total Page 6 Pages
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