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  ON Semiconductor Electronic Components Datasheet  

BTB08-600CW3G Datasheet

Triacs Silicon Bidirectional Thyristors

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BTB08-600CW3G,
BTB08-800CW3G
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Triacs
Silicon Bidirectional Thyristors
Designed for high performance full‐wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
ăBlocking Voltage to 800 V
ăOn‐State Current Rating of 8 A RMS at 25°C
ăUniform Gate Trigger Currents in Three Quadrants
ăHigh Immunity to dV/dt - 1500 V/ms minimum at 125°C
ăMinimizes Snubber Networks for Protection
ăIndustry Standard TO‐220AB Package
ăHigh Commutating dI/dt - 3.0 A/ms minimum at 125°C
ăThese are Pb-Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off-State Voltage (Note 1)
(TJ = -40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTB08-600CW3G
BTB08-800CW3G
VDRM,
VRRM
600
800
V
On‐State RMS Current
IT(RMS)
(Full Cycle Sine Wave, 60 Hz, TC = 80°C)
8.0
A
Peak Non‐Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
Circuit Fusing Consideration (t = 10 ms)
ITSM
I2t
90 A
36 A2sec
Non-Repetitive Surge Peak Off-State
Voltage (TJ = 25°C, t = 10ms)
VDSM/
VRSM
VDSM/VRSM
+100
V
Peak Gate Current (TJ = 125°C, t = 20ms) IGM 4.0 A
Peak Gate Power
(Pulse Width 1.0 ms, TC = 80°C)
PGM 20 W
Average Gate Power (TJ = 125°C)
PG(AV)
1.0
W
Operating Junction Temperature Range
TJ -ā40 to +125 °C
Storage Temperature Range
Tstg -ā40 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
TRIACS
8 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
4 MARKING
DIAGRAM
1
23
x
A
Y
WW
G
TO-220AB
CASE 221A
STYLE 4
BTB08-xCWG
AYWW
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb-Free Package
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 Main Terminal 2
ORDERING INFORMATION
Device
Package
BTB08-600CW3G TO-220AB
(Pb-Free)
Shipping
50 Units / Rail
BTB08-800CW3G TO-220AB 50 Units / Rail
(Pb-Free)
©Ă Semiconductor Components Industries, LLC, 2008
February, 2008 - Rev. 1
*For additional information on our Pb-Free strategy and
soldering details, please download the ON Semicon‐
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
1 Publication Order Number:
BTB08-600CW3/D


  ON Semiconductor Electronic Components Datasheet  

BTB08-600CW3G Datasheet

Triacs Silicon Bidirectional Thyristors

No Preview Available !

BTB08-600CW3G, BTB08-800CW3G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction-to-Case
Junction-to-Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 seconds
Symbol
RqJC
RqJA
TL
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Value
2.5
60
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min
Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 125°C
IDRM/
IRRM
-
-
-
-
ON CHARACTERISTICS
Peak On‐State Voltage (Note 2)
(ITM = ±ā11 A Peak)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
VTM - -
IGT
2.5 -
2.5 -
2.5 -
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±100 mA)
Latching Current (VD = 24 V, IG = 42 mA)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
IH - -
IL
--
--
--
Gate Trigger Voltage (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
VGT
0.5 -
0.5 -
0.5 -
Gate Non-Trigger Voltage (TJ = 125°C)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
VGD
0.2 -
0.2 -
0.2 -
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 125°C, No Snubber)
Critical Rate of Rise of On-State Current
(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr 100 ns)
Critical Rate of Rise of Off‐State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
(dI/dt)c
dI/dt
3.0
-
dV/dt
1500
-
-
-
Max Unit
0.005
1.0
mA
1.55 V
mA
35
35
35
45 mA
mA
50
80
50
V
1.7
1.1
1.1
V
-
-
-
- A/ms
50 A/ms
- V/ms
http://onsemi.com
2


Part Number BTB08-600CW3G
Description Triacs Silicon Bidirectional Thyristors
Maker ON Semiconductor
Total Page 6 Pages
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