BSS84 mosfet equivalent, p-channel mosfet.
* −0.13 A, −50 V, RDS(on) = 10 W at VGS = −5 V
* Voltage−Controlled P−Channel Small−Signal Switch
* High−Density Cell Design for Low RDS(on)
* High Satura.
requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low−voltage appli.
This P−channel enhancement−mode field−effect transistor is
produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process minimizes on−state resistance and to provide rugged and reliable performance and fast s.
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