BSS138W fet equivalent, n-channel fet.
* RDS(on) = 3.5 W @ VGS = 10 V, ID = 0.22 A
RDS(on) = 6.0 W @ VGS = 4.5 V, ID = 0.22 A
* High Density Cell Design For Extremely Low RDS(on)
* Rugged and Relia.
such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
* RDS(on) =.
These N−Channel Enhancement Mode Field Effect Transistor.
These products have been Designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance.
These products are particularly suited for low voltage, low cu.
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