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BDW47G - Darlington Complementary Silicon Power Transistors

Download the BDW47G datasheet PDF. This datasheet also covers the BDW42G variant, as both devices belong to the same darlington complementary silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

Features

  • High DC Current Gain.
  • hFE = 2500 (typ) @ IC = 5.0 Adc.
  • Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min).
  • BDW46 100 Vdc (min).
  • BDW42/BDW47.
  • Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc.
  • Monolithic Construction with Built.
  • In Base Emitter Shunt resistors.
  • TO.
  • 220 Compact Package.
  • These Devices are Pb.
  • Free.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BDW42G-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BDW47G
Manufacturer onsemi
File Size 82.39 KB
Description Darlington Complementary Silicon Power Transistors
Datasheet download datasheet BDW47G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BDW42G (NPN), BDW46G, BDW47G (PNP) Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min) − BDW46 100 Vdc (min) − BDW42/BDW47 • Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.
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