BDW42G transistors equivalent, darlington complementary silicon power transistors.
* High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc.
* Collector Emitter Sustaining Voltage @ 30 mAdc:
VCEO(sus) = 80 Vdc (min) − BDW46 100 Vdc (min) − BDW42.
Features
* High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc.
* Collector Emitter Sustaining Voltage @ 30 .
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