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BD238G - Plastic Medium Power Bipolar Transistors

This page provides the datasheet information for the BD238G, a member of the BD237G Plastic Medium Power Bipolar Transistors family.

Datasheet Summary

Features

  • High DC Current Gain.
  • Epoxy Meets UL 94 V0 @ 0.125 in.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – BD238G

Datasheet Details

Part number BD238G
Manufacturer ON Semiconductor
File Size 162.92 KB
Description Plastic Medium Power Bipolar Transistors
Datasheet download datasheet BD238G Datasheet
Additional preview pages of the BD238G datasheet.

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Other Datasheets by ON Semiconductor
  • BD238 - Plastic Medium Power Bipolar Transistors
  • BD234 - Plastic Medium Power Bipolar Transistors
  • BD234G - Plastic Medium Power Bipolar PNP Transistors
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Full PDF Text Transcription

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BD237G (NPN), BD234G, BD238G (PNP) Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • High DC Current Gain • Epoxy Meets UL 94 V0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD234G DB237G, BD238G VCEO 45 80 Vdc Collector−Base Voltage BD234G DB237G, BD238G VCBO 60 100 Vdc Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25_C Operating and Storage Junction Temperature Range VEBO IC IB PD TJ, Tstg 5.0 2.0 1.
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