BC850
BC850 is NPN Transistor manufactured by onsemi.
Features
- Switching and Amplifier Applications
- Suitable for Automatic Insertion in Thick and Thin-film Circuits
- Low Noise: BC850
- plement to BC856, BC857, BC858, BC859, and BC860
2 SOT-23 1 1. Base 2. Emitter 3. Collector
Ordering Information(1)
Part Number BC846AMTF BC846BMTF BC846CMTF BC847AMTF BC847BMTF BC847CMTF BC848BMTF BC848CMTF BC850AMTF BC850CMTF
Marking 8AA 8AB 8AC 8BA 8BB 8BC 8CB 8CC 8EA 8EC
Package SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L
Packing Method Tape and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel
Note:
1. Affix “-A,-B,-C” means h FE classification. Affix “-M” means SOT-23 package. Affix “-TF” means the tape and reel type packing.
© 2002 Semiconductor ponents Industries, LLC. September-2017, Rev. 2
Publication Order Number: BC846/D
BC846 / BC847 / BC848 / BC850
- NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the remended operating conditions and stressing the parts to these levels is not remended. In addition, extended exposure to stresses above the remended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
BC846
VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage
BC847 / BC850 BC848 BC846 BC847 / BC850 BC848
50 V 30 65 45 V 30
VEBO
IC TJ TSTG
Emitter-Base Voltage
Collector Current (DC) Junction Temperature Storage Temperature Range
BC846 / BC847 BC848 / BC850
6 5 100 150 -65 to +150
V m A °C °C
Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise...