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BC517 - NPN Darlington Transistor

Description

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92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components I

Features

  • This Device is Designed for.

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Datasheet Details

Part number BC517
Manufacturer onsemi
File Size 162.99 KB
Description NPN Darlington Transistor
Datasheet download datasheet BC517 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com NPN Darlington Transistor BC517 Features • This Device is Designed for Applications Requiring Extremely High Current Gain at Currents to 1.0 A • Sourced from Process 05 • This is a Pb−Free Device 1 2 3 1. Collector 2. Base 3. Emitter TO−92 3 4.825x4.76 LEADFORMER CASE 135AR ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Note 1, 2) Symbol Parameter Value Unit VCEO VCBO VEBO IC TJ, TSTG Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Operating and Storage Junction Temperature Range 30 V 40 V 10 V 1.2 A −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.