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BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors
NPN Silicon
http://onsemi.com Features
COLLECTOR 1 2 BASE Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg −55 to +150 BC337 45 50 5.0 800 BC338 25 30 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C
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• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
3 EMITTER
MARKING DIAGRAM
BC33 xxxx YWW
°C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.
BC337-16 Datasheet
