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BAS16W1 - Ultra High Speed Switching Diodes

Description

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

88 2.00x1.25x0.90, 0.65P PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components In

Features

  • Fast trr, < 3.0 ns.
  • Low CD, < 2.0 pF.
  • NSV Prefix for Automotive and Other.

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Datasheet Details

Part number BAS16W1
Manufacturer onsemi
File Size 247.12 KB
Description Ultra High Speed Switching Diodes
Datasheet download datasheet BAS16W1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BAS16W1 Ultra High Speed Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−88 package which is designed for low power surface mount applications. Features • Fast trr, < 3.0 ns • Low CD, < 2.0 pF • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Reverse Voltage Peak Reverse Voltage Forward Current (Note 1) Peak Forward Current (Note 1) Peak Forward Surge Current (10 ms) (Note 1) VR VRM IF IFM IFSM 100 V 100 V 200 mAdc 300 mAdc 1.
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