The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Ordering number : ENA1317A
ATP202
N-Channel Power MOSFET
30V, 50A, 12mΩ, Single ATPAK
http://onsemi.com
Features
• Low ON-resistance • 4.5V drive • Halogen free compliance
• Large current • Slim package • Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature
VDSS VGSS ID IDP PD Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note :*1 VDD=10V, L=100μH, IAV=25A *2 L≤100μH, Single pulse
EAS IAV
Conditions
PW≤10μs, duty cycle≤1% Tc=25°C
Ratings 30
±20 50
150 40
150 --55 to +150
45 25
Unit V V A A W °C °C mJ A
Stresses exceeding Maximum Ratings may damage the device.
ATP202 Datasheet
