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6HN04MH
Ordering number : ENA0365A
6HN04MH
Features
• 4V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm)
Ratings 60
±20 200 800 0.