50C02SS - Bipolar Transistor

onsemi

Key Features

Large current capacity.
Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=175mΩ[IC=0.5A, IB=50mA].
Ultrasmall package facilitates miniaturization in end products.
Small ON-resistance (Ron) Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEB.

50C02SS bipolar transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	50C02SS
Manufacturer	onsemi
File Size	423.94 KB
Description	Bipolar Transistor
Datasheet	50C02SS Datasheet

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Ordering number : EN7519A 50C02SS Bipolar Transistor 50V, 0.4A, Low VCE(sat) NPN Single SSFP http://onsemi.com Applications • Low-frequency Amplifer, high-speed switching small motor drive, muting circuit Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=175mΩ[IC=0.5A, IB=50mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Mounted on a glass-epoxy board (20×30×1.