4N25M Overview
The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a standard plastic 6−pin dual−in−line package.
4N25M Key Features
- Minimum Current Transfer Ratio at IF = 10 mA, VCE = 10 V
- 10% for 4N27M and 4N28M
- 20% for 4N25M and 4N26M
- 100% for 4N35M and 4N36M and 4N37M
- Safety and Regulatory Approvals
- UL1577, 4,170 VACRMS for 1 Minute
- DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
