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3LN01C - N-Channel Small Signal MOSFET

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Storage Temperature Tstg This product is designed to “ESD immunity < 200V.
  • ”, so please take care when handling.
  • Machine Model Rating.

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Datasheet Details

Part number 3LN01C
Manufacturer onsemi
File Size 162.96 KB
Description N-Channel Small Signal MOSFET
Datasheet download datasheet 3LN01C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN6260C 3LN01C N-Channel Small Signal MOSFET 30V, 0.15A, 3.7Ω, Single CP http://onsemi.com Features • Low ON-resistance • Ultrahigh-speed switching • 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Ratings 30 ±10 0.15 0.6 0.25 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
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