30A02MH - Bipolar Transistor

onsemi

Key Features

Large current capacity.
Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ=580mΩ[IC=0.7A, IB=35mA].
Small ON-resistance (Ron) Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions When mounted on ceram.

30A02MH bipolar transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	30A02MH
Manufacturer	onsemi
File Size	281.96 KB
Description	Bipolar Transistor
Datasheet	30A02MH Datasheet

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Full PDF Text Transcription (Reference)

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Ordering number : EN7359A 30A02MH Bipolar Transistor –30V, –0.7A, Low VCE(sat) PNP Single MCPH3 http://onsemi.com Applications • Low-frequency Ampliﬁer, high-speed switching small motor drive Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ=580mΩ[IC=0.7A, IB=35mA] • Small ON-resistance (Ron) Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions When mounted on ceramic substrate (600mm2×0.8mm) Ratings --30 --30 --5 --700 --1.