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2SD1620 - Bipolar Transistor

Features

  • Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted.
  • Large current capacity and highly resistant to breakdown.
  • Excellent linearity of hFE in the region from low current to high current.
  • Ultrasmall size supports high-density, ultrasmall-sized hybrid IC designs Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitt.

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Datasheet Details

Part number 2SD1620
Manufacturer onsemi
File Size 186.61 KB
Description Bipolar Transistor
Datasheet download datasheet 2SD1620 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN1719D 2SD1620 Bipolar Transistor 10V, 3A, Low VCE(sat), NPN Single PCP http://onsemi.com Features • Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted • Large current capacity and highly resistant to breakdown • Excellent linearity of hFE in the region from low current to high current • Ultrasmall size supports high-density, ultrasmall-sized hybrid IC designs Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEX VCEO VEBO IC ICP Package Dimensions unit : mm (typ) 7007B-004 Top View 4.5 1.6 2SD1620-TD-E 1.
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