2N3055G transistors equivalent, complementary silicon power transistors.
* DC Current Gain − hFE = 20−70 @ IC = 4 Adc
* Collector−Emitter Saturation Voltage −
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
* Excellent Safe Operating Area
Features
* DC Current Gain − hFE = 20−70 @ IC = 4 Adc
* Collector−Emitter Saturation Voltage −
VCE(sat) = 1.1 V.
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