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P2N2222A
Amplifier Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Collector −Emitter Voltage
VCEO
40
Collector −Base Voltage
VCBO
75
Emitter−Base Voltage
VEBO
6.0
Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
IC
600
PD
625
5.0
Unit Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.5
W
12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to
°C
+150
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction to Ambient
RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device.
2N2222 Datasheet
