Datasheet Details
| Part number | MSM56V16800E |
|---|---|
| Manufacturer | OKI Electric |
| File Size | 400.66 KB |
| Description | 2-Bank x 1048576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM |
| Datasheet |
 MSM56V16800E Datasheet
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Description
The MSM56V16800E is a 2-bank 1,048,576-word8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology.
The device operates at 3.3 V.
The inputs and outputs are LVTTL compatible.
Features
- Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell 2-bank.
- 1,048,576-word.
- 8-bit configuration 3.3 V power supply, ± 0.3 V tolerance Input : LVTTL compatible Output : LVTTL compatible Refresh : 4096 cycles/64 ms Programmable data transfer mode.
- CAS latency (1, 2, 3).
- Burst length (1, 2, 4, 8, full page).
- Data scramble (sequential, interleave).
- CBR auto-refresh, Self.