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MD56V82160 - SYNCHRONOUS DYNAMIC RAM

Description

The MD56V82160 is a 4-Bank  4,194,304-word  16-bit Synchronous dynamic RAM.

The device operates at 3.3 V.

The inputs and outputs are LVTTL compatible.

Features

  • Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell.
  • 4-Bank  4,194,304-word  16-bit configuration.
  • Single 3.3 V power supply, 0.3 V tolerance.
  • Input : LVTTL compatible.
  • Output : LVTTL compatible.
  • Refresh : 8192 cycles/64 ms.
  • Programmable data transfer mode - CAS Latency (2, 3) - Burst Length (1, 2, 4, 8, Full Page) - Data scramble (sequential, interleave).
  • Auto-refresh, Self-refresh capability.
  • Le.

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OKI Semiconductor MD56V82160 4-Bank  4,194,304-Word  16-Bit SYNCHRONOUS DYNAMIC RAM FEDD56V82160-01 Issue Date:Feb.14, 2008 DESCRIPTION The MD56V82160 is a 4-Bank  4,194,304-word  16-bit Synchronous dynamic RAM. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible. FEATURES • Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell • 4-Bank  4,194,304-word  16-bit configuration • Single 3.3 V power supply, 0.
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